Découvrez les produits 67
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
2EDN7524FXTMA1
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 8SOIC
Tape & Reel (TR) 4.5 V ~ 20 V 8-SOIC (0.154",3.90mm Width) PG-DSO-8-60 Non-Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns - 5A,5A
2EDN7524FXTMA1
Infineon Technologies
4,769
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8SOIC
Cut Tape (CT) 4.5 V ~ 20 V 8-SOIC (0.154",3.90mm Width) PG-DSO-8-60 Non-Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns - 5A,5A
2EDN7524FXTMA1
Infineon Technologies
4,769
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8SOIC
- 4.5 V ~ 20 V 8-SOIC (0.154",3.90mm Width) PG-DSO-8-60 Non-Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns - 5A,5A
2EDN8523FXTMA1
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 8DSO
Tape & Reel (TR) 4.5 V ~ 20 V 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8523FXTMA1
Infineon Technologies
4,909
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
Cut Tape (CT) 4.5 V ~ 20 V 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8523FXTMA1
Infineon Technologies
4,909
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
- 4.5 V ~ 20 V 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN7524GXTMA1
Infineon Technologies
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE DRIVER 8WSON
Tape & Reel (TR) 4.5 V ~ 20 V 8-WDFN Exposed Pad PG-WSON-8-1 Non-Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns - 5A,5A
2EDN7524GXTMA1
Infineon Technologies
6,404
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 8WSON
Cut Tape (CT) 4.5 V ~ 20 V 8-WDFN Exposed Pad PG-WSON-8-1 Non-Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns - 5A,5A
2EDN7524GXTMA1
Infineon Technologies
6,404
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 8WSON
- 4.5 V ~ 20 V 8-WDFN Exposed Pad PG-WSON-8-1 Non-Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns - 5A,5A
2EDN7523GXTMA1
Infineon Technologies
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE DRIVER 8WSON
Tape & Reel (TR) 4.5 V ~ 20 V 8-WDFN Exposed Pad PG-WSON-8-1 Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns - 5A,5A
2EDN7523GXTMA1
Infineon Technologies
4,000
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 8WSON
Cut Tape (CT) 4.5 V ~ 20 V 8-WDFN Exposed Pad PG-WSON-8-1 Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns - 5A,5A
2EDN7523GXTMA1
Infineon Technologies
4,000
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 8WSON
- 4.5 V ~ 20 V 8-WDFN Exposed Pad PG-WSON-8-1 Inverting Independent Low-Side 2 N-Channel MOSFET 5.3ns,4.5ns - 5A,5A
1EDN7512GXTMA1
Infineon Technologies
Enquête
-
-
MOQ: 4000  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSOP
Tape & Reel (TR) 4.5 V ~ 20 V 6-WDFN Exposed Pad PG-WSON-6-1 Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET 6.5ns,4.5ns - 4A,8A
1EDN7512GXTMA1
Infineon Technologies
2,948
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSOP
Cut Tape (CT) 4.5 V ~ 20 V 6-WDFN Exposed Pad PG-WSON-6-1 Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET 6.5ns,4.5ns - 4A,8A
1EDN7512GXTMA1
Infineon Technologies
2,948
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSOP
- 4.5 V ~ 20 V 6-WDFN Exposed Pad PG-WSON-6-1 Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET 6.5ns,4.5ns - 4A,8A
1EDN8511BXUSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) 8 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN8511BXUSA1
Infineon Technologies
2,696
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) 8 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN8511BXUSA1
Infineon Technologies
2,696
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- 8 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN7511BXUSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) 4.5 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN7511BXUSA1
Infineon Technologies
2,449
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) 4.5 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET 6.5ns,4.5ns 1.2V,1.9V 4A,8A