Découvrez les produits 20
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Package / Case Supplier Device Package Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
1EDN7512GXTMA1
Infineon Technologies
Enquête
-
-
MOQ: 4000  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSOP
Tape & Reel (TR) 4.5 V ~ 20 V 6-WDFN Exposed Pad PG-WSON-6-1 Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns - 4A,8A
1EDN7512GXTMA1
Infineon Technologies
2,948
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSOP
Cut Tape (CT) 4.5 V ~ 20 V 6-WDFN Exposed Pad PG-WSON-6-1 Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns - 4A,8A
1EDN7512GXTMA1
Infineon Technologies
2,948
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSOP
- 4.5 V ~ 20 V 6-WDFN Exposed Pad PG-WSON-6-1 Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns - 4A,8A
1EDN8511BXUSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) 8 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN8511BXUSA1
Infineon Technologies
2,696
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) 8 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN8511BXUSA1
Infineon Technologies
2,696
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- 8 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN7511BXUSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) 4.5 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN7511BXUSA1
Infineon Technologies
2,449
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) 4.5 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN7511BXUSA1
Infineon Technologies
2,449
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- 4.5 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
2ED020I12F2XUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER IGBT DSO36
Tape & Reel (TR) 13 V ~ 20 V 36-BSSOP (0.295",7.50mm Width),32 Leads PG-DSO-36-58 Independent Half-Bridge 2 IGBT 1200V 30ns,50ns 1.5V,3.5V 2A,2A
2ED020I12F2XUMA1
Infineon Technologies
993
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER IGBT DSO36
Cut Tape (CT) 13 V ~ 20 V 36-BSSOP (0.295",7.50mm Width),32 Leads PG-DSO-36-58 Independent Half-Bridge 2 IGBT 1200V 30ns,50ns 1.5V,3.5V 2A,2A
2ED020I12F2XUMA1
Infineon Technologies
993
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER IGBT DSO36
- 13 V ~ 20 V 36-BSSOP (0.295",7.50mm Width),32 Leads PG-DSO-36-58 Independent Half-Bridge 2 IGBT 1200V 30ns,50ns 1.5V,3.5V 2A,2A
2ED020I12FAXUMA2
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER IGBT DSO36
Tape & Reel (TR) 13 V ~ 20 V 36-BSSOP (0.295",7.50mm Width),32 Leads PG-DSO-36-58 Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 1200V 30ns,50ns 1.5V,3.5V 2.4A,2.4A
2ED020I12FAXUMA2
Infineon Technologies
809
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER IGBT DSO36
Cut Tape (CT) 13 V ~ 20 V 36-BSSOP (0.295",7.50mm Width),32 Leads PG-DSO-36-58 Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 1200V 30ns,50ns 1.5V,3.5V 2.4A,2.4A
2ED020I12FAXUMA2
Infineon Technologies
809
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER IGBT DSO36
- 13 V ~ 20 V 36-BSSOP (0.295",7.50mm Width),32 Leads PG-DSO-36-58 Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 1200V 30ns,50ns 1.5V,3.5V 2.4A,2.4A
1EDN7512BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Tape & Reel (TR) 4.5 V ~ 20 V SC-74A,SOT-753 PG-SOT23-5-1 Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns - 4A,8A
1EDN7512BXTSA1
Infineon Technologies
879
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Cut Tape (CT) 4.5 V ~ 20 V SC-74A,SOT-753 PG-SOT23-5-1 Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns - 4A,8A
1EDN7512BXTSA1
Infineon Technologies
879
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
- 4.5 V ~ 20 V SC-74A,SOT-753 PG-SOT23-5-1 Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns - 4A,8A
1EDN7511BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR LOW-SIDE SOT23-6
Tape & Reel (TR) 4.5 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Single Low-Side 1 IGBT,N-Channel MOSFET - - 1.2V,1.9V 4A,8A
1EDN8511BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR LOW-SIDE SOT23-6
Tape & Reel (TR) 4.5 V ~ 20 V SOT-23-6 PG-SOT23-6-2 Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A