Découvrez les produits 22
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
2EDN8523FXTMA1
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 8DSO
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8523FXTMA1
Infineon Technologies
4,909
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
Cut Tape (CT) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8523FXTMA1
Infineon Technologies
4,909
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
- 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN7523GXTMA1
Infineon Technologies
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE DRIVER 8WSON
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad PG-WSON-8-1 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN7523GXTMA1
Infineon Technologies
4,000
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 8WSON
Cut Tape (CT) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad PG-WSON-8-1 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN7523GXTMA1
Infineon Technologies
4,000
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 8WSON
- 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad PG-WSON-8-1 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN7523FXTMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 8DSO
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN7523FXTMA1
Infineon Technologies
1,803
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
Cut Tape (CT) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN7523FXTMA1
Infineon Technologies
1,803
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
- 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN7523RXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE DRVR 8TSSOP
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad PG-TSSOP-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN7523RXUMA1
Infineon Technologies
1,240
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8TSSOP
Cut Tape (CT) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad PG-TSSOP-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN7523RXUMA1
Infineon Technologies
1,240
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8TSSOP
- 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad PG-TSSOP-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
6ED003L02F2XUMA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR 600V 3PHASE 28TSSOP
Tape & Reel (TR) 13 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-TSSOP (0.173",4.40mm Width) PG-TSSOP-28 3-Phase Half-Bridge 6 IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
6ED003L02F2XUMA1
Infineon Technologies
1,843
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 600V 3PHASE 28TSSOP
Cut Tape (CT) 13 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-TSSOP (0.173",4.40mm Width) PG-TSSOP-28 3-Phase Half-Bridge 6 IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
6ED003L02F2XUMA1
Infineon Technologies
1,843
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 600V 3PHASE 28TSSOP
- 13 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-TSSOP (0.173",4.40mm Width) PG-TSSOP-28 3-Phase Half-Bridge 6 IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
6ED003L06F2XUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR DSO28
Tape & Reel (TR) 13 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-SOIC (0.295",7.50mm Width) PG-DSO-28 3-Phase Half-Bridge 6 IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
6ED003L06F2XUMA1
Infineon Technologies
736
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR DSO28
Cut Tape (CT) 13 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-SOIC (0.295",7.50mm Width) PG-DSO-28 3-Phase Half-Bridge 6 IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
6ED003L06F2XUMA1
Infineon Technologies
736
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR DSO28
- 13 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-SOIC (0.295",7.50mm Width) PG-DSO-28 3-Phase Half-Bridge 6 IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
2EDN8523RXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE DRVR 8TSSOP
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) PG-TSSOP-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8523RXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8TSSOP
Cut Tape (CT) 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) PG-TSSOP-8 Independent Low-Side 2 N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A