- Packaging:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Channel Type:
-
- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 22
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DRIVER 8WSON
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
1,803
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
1,803
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE DRVR 8TSSOP
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | PG-TSSOP-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
1,240
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8TSSOP
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | PG-TSSOP-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
1,240
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8TSSOP
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | PG-TSSOP-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
Tape & Reel (TR) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | PG-TSSOP-28 | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
1,843
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
Cut Tape (CT) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | PG-TSSOP-28 | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
1,843
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
- | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | PG-TSSOP-28 | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
Tape & Reel (TR) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28 | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
Cut Tape (CT) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28 | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
- | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28 | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE DRVR 8TSSOP
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | PG-TSSOP-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8TSSOP
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | PG-TSSOP-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A |