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- Driven Configuration：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 1,158
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DVR QUAD HISIDE MOSFET 18-DIP
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Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Through Hole | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DVR QUAD HISIDE MOSFET 18SOIC
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Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-SOIC (0.295"，7.50mm Width) | 18-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 160 MPQ: 1
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IC POWER MODULE 1.6A 500V 11-SIP
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Tube | iMOTION | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 11-SIP，9 Leads | 11-SIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 500V | - | 0.8V，2.9V | ||
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Microchip Technology |
Enquête
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-
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MOQ: 2800 MPQ: 1
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IC PWM HIGH-SIDE SWITCH 8-DIP
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Tube | - | 25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | ||
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Microchip Technology |
Enquête
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-
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MOQ: 4000 MPQ: 1
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IC PWM HIGH-SIDE SWITCH 16-SOIC
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Tape & Reel (TR) | - | 25V (Max) | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 980 MPQ: 1
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IC DRIVER MOSFET DUAL 8-SOIC
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Tube | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 20ns，20ns | - | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET QUAD 14-SOIC
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Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 15V | 20ns，20ns | - | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 500 MPQ: 1
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IC DRIVER MOSFET QUAD 14-SOIC
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Tube | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 15V | 20ns，20ns | - | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DRIVER SW MOSF HI SIDE 8UMAX
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Tape & Reel (TR) | - | 5 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-uMAX | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.6V，2V | ||
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Maxim Integrated |
Enquête
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MOQ: 0 MPQ: 1
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IC DRIVER SW MOSF HI SIDE 8UMAX
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Tube | - | 5 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-uMAX | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.6V，2V | ||
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Microchip Technology |
Enquête
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-
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MOQ: 665 MPQ: 1
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IC DRIVER MOSF HI/LO SIDE 8SOIC
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Microchip Technology |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSF HI/LO SIDE 8SOIC
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Tape & Reel (TR) | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Microchip Technology |
Enquête
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-
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MOQ: 550 MPQ: 1
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IC DRIVER MOSFET HI/LO SIDE 8DIP
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Microchip Technology |
Enquête
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-
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MOQ: 665 MPQ: 1
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IC DRIVER MOSF HI/LOW SIDE 8SOIC
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Microchip Technology |
Enquête
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MOQ: 25 MPQ: 1
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IC DRIVER MOSF DUAL HI/LOW 14DIP
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Microchip Technology |
Enquête
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-
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MOQ: 47 MPQ: 1
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IC DRIVER MOSF DUAL HI/LO 16SOIC
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Microchip Technology |
Enquête
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-
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MOQ: 570 MPQ: 1
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IC DRIVER MOSFET HISIDE HS 8SOIC
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Tube | - | 12 V ~ 36 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | ||
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Microchip Technology |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET HISIDE HS 8SOIC
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Tape & Reel (TR) | - | 12 V ~ 36 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | ||
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Microchip Technology |
Enquête
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-
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MOQ: 500 MPQ: 1
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IC DRIVER MOSFET HI SIDE HS 8DIP
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Tube | - | 12 V ~ 36 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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PWR MOD 180W GATE DRIVER 11-SIP
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Tube | iMOTION | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 11-SIP，9 Leads | 11-SIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 500V | - | 0.8V，2.9V |
