- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 46
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Renesas Electronics America Inc. |
409
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8DIP
|
4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
|
|
|
Infineon Technologies |
18,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
2,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Maxim Integrated |
351
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
|
|
|
Infineon Technologies |
1,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Maxim Integrated |
150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-DIP
|
4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
|
|
|
Renesas Electronics America Inc. |
3,142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
|
|
|
Microchip Technology |
839
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI/LOSIDE 8-DIP
|
2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | ||
|
|
|
Microchip Technology |
932
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HI/LO SIDE 8DIP
|
2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 18000 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，40ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC HALF BRIDGE DRIVER W/DIO 8DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-DIP
|
4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
|
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 550 MPQ: 1
|
IC DRIVER MOSFET HI/LO SIDE 8DIP
|
2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | ||
|
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER MOSFET HI SIDE HS 8DIP
|
12 V ~ 36 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | ||
|
|
Microchip Technology |
334
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HI SIDE HS 8DIP
|
12 V ~ 36 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | |||
|
|
Microchip Technology |
225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HI/LO SIDE 8DIP
|
7 V ~ 32 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 2V，4.5V |
