- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 75
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Renesas Electronics America Inc. |
409
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8DIP
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Tube | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
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Infineon Technologies |
18,868
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF BRDG SELF-OSC 8-DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Infineon Technologies |
2,820
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE OSC 8DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Maxim Integrated |
351
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
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Infineon Technologies |
1,963
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF BRDG SELF-OSC 8-DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Maxim Integrated |
150
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
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Renesas Electronics America Inc. |
3,142
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
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Powerex Inc. |
541
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC IGBT GATE DVR ISO 5A
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Bulk | - | 14.2 V ~ 15.8 V | -20°C ~ 70°C (TA) | 44-DIP Module，28 Leads | Module | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | - | 400ns，300ns | - | ||
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Microchip Technology |
839
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER HI/LOSIDE 8-DIP
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Microchip Technology |
932
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET HI/LO SIDE 8DIP
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Maxim Integrated |
61
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR MOSFET QUAD 18-DIP
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Tube | - | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | ||
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Tamura |
36
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC N-CH GATE DRIVER
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Tray | - | 15 V ~ 24 V | -30°C ~ 85°C (TA) | 34-DIP Module，31 Leads | 502 | - | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Tamura |
25
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC IBGT GATE DRIVER
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Tray | - | 15 V ~ 24 V | -30°C ~ 85°C (TA) | 34-DIP Module，31 Leads | 502 | - | Independent | Half-Bridge | 2 | IGBT | - | - | 0.8V，2V | ||
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Tamura |
19
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC IBGT GATE DRIVER
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Tray | - | 15 V ~ 24 V | -30°C ~ 85°C (TA) | 34-DIP Module，31 Leads | 502 | - | Independent | Half-Bridge | 2 | IGBT | - | - | 0.8V，2V | ||
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Tamura |
17
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC N-CH GATE DRIVER
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Tray | - | 15 V ~ 24 V | -30°C ~ 85°C (TA) | 34-DIP Module，31 Leads | 502 | - | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 18000 MPQ: 1
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IC DVR HALF BRDG SELF-OSC 8-DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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STMicroelectronics |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
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IC IGBT/MOS DRIVER TRPL 16-DIP
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Tube | - | 4 V ~ 16 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-DIP | Inverting，Non-Inverting | Independent | Low-Side | 3 | IGBT，N-Channel MOSFET | - | - | 0.8V，2V | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DVR MOSFET QUAD HI-SIDE 18DIP
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Tube | - | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，40ns | - | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 350 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
|
Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - |
