- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 8
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Maxim Integrated |
135
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET QUAD 18-SOIC
|
Tube | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | 1.7μs,2.5μs | 0.8V,2.4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 80 MPQ: 1
|
IC DRVR MOSFET QUAD 18-SOIC
|
Tube | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | 1.7μs,2.5μs | 0.8V,2.4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DVR QUAD HISIDE MOSFET 18SOIC
|
Tube | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | 1.7μs,2.5μs | 0.8V,2.4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DVR QUAD HISIDE MOSFET 18SOIC
|
Tube | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | 1.7μs,2.5μs | 0.8V,2.4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DRVR MOSFET QUAD 18-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | 1.7μs,2.5μs | 0.8V,2.4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DRVR MOSFET QUAD 18-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | 1.7μs,2.5μs | 0.8V,2.4V | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC DRVR HALF BRIDGE 6A 18-SOIC
|
Bulk | - | - | 18-SOIC (0.295",7.50mm Width) Exposed Pad | - | - | - | - | - | - | - | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRVR HALF BRIDGE 6A 18-SOIC
|
Tape & Reel (TR) | - | - | 18-SOIC (0.295",7.50mm Width) Exposed Pad | - | - | - | - | - | - | - |