- Packaging：
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- Voltage - Supply：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 6
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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NXP USA Inc. |
Enquête
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-
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MOQ: 98 MPQ: 1
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IC DRIVER DUAL H-SIDE TMOS 8SOIC
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Tube | 7 V ~ 40 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | High-Side | 2 | N-Channel MOSFET | - | - | 0.7V，1.7V | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC TMOS DRIVER DUAL HISIDE 8SOIC
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Tape & Reel (TR) | 7 V ~ 40 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | High-Side | 2 | N-Channel MOSFET | - | - | 0.7V，1.7V | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 98 MPQ: 1
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IC TMOS DRIVER DUAL HISIDE 8SOIC
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Tube | 7 V ~ 40 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | High-Side | 2 | N-Channel MOSFET | - | - | 0.7V，1.7V | ||
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IXYS |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC DRVR HALF BRIDGE 4A 16-MLP
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Tape & Reel (TR) | 10 V ~ 35 V | 16-VDFN Exposed Pad | 16-MLP (7x6) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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IXYS |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC DRVR HALF BRIDGE 4A 16-MLP
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Tape & Reel (TR) | 10 V ~ 35 V | 16-VDFN Exposed Pad | 16-MLP (7x6) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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STMicroelectronics |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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POWER TRAIN & SAFETY
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- | 5.2 V ~ 20 V | 36-BSSOP (0.433"，11.00mm Width) Exposed Pad | PowerSO-36 | Inverting，Non-Inverting | Synchronous | Low-Side | 8 | N-Channel，P-Channel MOSFET | - | 9ns，9ns | 1V，2V |
