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- Driven Configuration：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 1,158
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Texas Instruments |
Enquête
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MOQ: 250 MPQ: 1
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IC MOSFET DRIVER SYNC 8WSON
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Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 30ns，8ns | 0.6V，2.65V | ||
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Linear Technology/Analog Devices |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC GATE DRVR HIGH-SIDE 10MSOP
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Tape & Reel (TR) | - | 60V (Max) | -55°C ~ 150°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 90ns，40ns | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 80 MPQ: 1
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IC DRVR MOSFET QUAD 18-SOIC
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Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-SOIC (0.295"，7.50mm Width) | 18-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DVR MOSFET QUAD HI-SIDE 18DIP
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Tube | - | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Through Hole | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 200 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，40ns | - | ||
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Infineon Technologies |
Enquête
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MOQ: 66 MPQ: 1
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IC DRIVER BRIDGE 3-PHASE 64-MQFP
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Tray | - | 12.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 64-BQFP | 64-MQFP (20x14) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 3 | IGBT | 600V | 115ns，25ns | - | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 350 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 380 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8SOIC
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 190 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8SOIC
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Infineon Technologies |
Enquête
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MOQ: 2500 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8SOIC
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Tape & Reel (TR) | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 350 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8SOIC
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Tape & Reel (TR) | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 200 MPQ: 1
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IC HALF BRIDGE DRIVER W/DIO 8DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Infineon Technologies |
Enquête
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MOQ: 95 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8SOIC
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Tube | - | 10 V ~ 15.6 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC MOSFET DVR DUAL PWR 8-SOIC
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC MOSFET DVR DUAL PWR 8-SOIC
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
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Maxim Integrated |
Enquête
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MOQ: 0 MPQ: 1
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IC MOSFET DVR DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
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Maxim Integrated |
Enquête
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
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Maxim Integrated |
Enquête
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MOQ: 0 MPQ: 1
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IC DVR QUAD HISIDE MOSFET 18-DIP
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Tube | - | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Through Hole | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | ||
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Maxim Integrated |
Enquête
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MOQ: 0 MPQ: 1
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IC DVR QUAD HISIDE MOSFET 18SOIC
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Tube | - | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-SOIC (0.295"，7.50mm Width) | 18-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V |
