Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 280
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
ISL89163FBECZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89163FBECZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89163FRTCZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89163FRTCZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89164FBECZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89164FBECZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89164FRTCZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89164FRTCZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89165FBECZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89165FBECZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89165FRTCZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89165FRTCZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V
ISL89160FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89160FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89161FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89161FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89162FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89162FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89160FBEAZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89160FRTAZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V