Découvrez les produits 195
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
UC3710T
Texas Instruments
5,125
3 jours
-
MOQ: 1  MPQ: 1
IC COMPL MOSFET DRVR TO-220-5
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting,Non-Inverting IGBT,N-Channel MOSFET 85ns,85ns 0.8V,2V
MAX4420CPA+
Maxim Integrated
200
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET SNGL 6A HS 8DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V
MAX4420EPA+
Maxim Integrated
2,350
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SGL 6A HS 8-DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V
MAX4420ESA+
Maxim Integrated
263
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET 6A HS 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V
UC3710N
Texas Instruments
3,352
3 jours
-
MOQ: 1  MPQ: 1
IC COMPLEMENT MOSFET DRVR 8-DIP
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting IGBT,N-Channel MOSFET 85ns,85ns 0.8V,2V
MAX4429CSA+
Maxim Integrated
536
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V
MAX4420CSA+
Maxim Integrated
329
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SGL 6A HS 8-SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V
MAX4429EPA+
Maxim Integrated
322
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V
MAX4429ESA+
Maxim Integrated
168
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V
UC3710TG3
Texas Instruments
988
3 jours
-
MOQ: 1  MPQ: 1
IC HIGH CURRENT FET DRVR TO220-5
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting,Non-Inverting IGBT,N-Channel MOSFET 85ns,85ns 0.8V,2V
UC3710DW
Texas Instruments
235
3 jours
-
MOQ: 1  MPQ: 1
IC HIGH CURRENT FET DRVR 16-SOIC
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Inverting,Non-Inverting IGBT,N-Channel MOSFET 85ns,85ns 0.8V,2V
MAX4429CPA+
Maxim Integrated
55
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET SNGL 6A HS 8DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V
MAX4420CSA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SGL 6A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V
MAX4420ESA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SGL 6A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V
UC2710TG3
Texas Instruments
Enquête
-
-
MOQ: 100  MPQ: 1
IC HIGH CURRENT FET DRVR TO220-5
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting,Non-Inverting IGBT,N-Channel MOSFET 85ns,85ns 0.8V,2V
UC3710NG4
Texas Instruments
Enquête
-
-
MOQ: 100  MPQ: 1
IC HIGH CURRENT FET DRVR 8-DIP
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting IGBT,N-Channel MOSFET 85ns,85ns 0.8V,2V
UC3710DWG4
Texas Instruments
Enquête
-
-
MOQ: 80  MPQ: 1
IC HIGH CURRENT FET DRVR 16-SOIC
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Inverting,Non-Inverting IGBT,N-Channel MOSFET 85ns,85ns 0.8V,2V
UC2710N
Texas Instruments
Enquête
-
-
MOQ: 50  MPQ: 1
IC HIGH CURRENT FET DRIVER 8-DIP
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting IGBT,N-Channel MOSFET 85ns,85ns 0.8V,2V
UC2710NG4
Texas Instruments
Enquête
-
-
MOQ: 50  MPQ: 1
IC HIGH CURRENT FET DRIVER 8-DIP
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting IGBT,N-Channel MOSFET 85ns,85ns 0.8V,2V
UC2710T
Texas Instruments
6
3 jours
-
MOQ: 1  MPQ: 1
IC HIGH CURRENT FET DRVR TO220-5
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting,Non-Inverting IGBT,N-Channel MOSFET 85ns,85ns 0.8V,2V