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- Voltage - Supply：
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- Rise / Fall Time (Typ)：
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- Conditions sélectionnées:
Découvrez les produits 7
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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Power Integrations |
558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER 6A
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 105°C (TA) | Module | Module | - | Independent | Half-Bridge | 2 | IGBT | 1200V | 20ns，13ns | ||
|
|
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Power Integrations |
107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER 6A
|
Tray | SCALE-1 | 15V | -40°C ~ 85°C (TA) | Module | Module | - | - | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 100ns，80ns | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 16TDFN
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-WFDFN Exposed Pad | 16-TDFN (5x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 16TDFN
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-WFDFN Exposed Pad | 16-TDFN (5x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | ||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
SIC MOSFET DRIVER
|
Tape & Reel (TR) | - | 10 V ~ 22 V | -55°C ~ 150°C (TJ) | 24-VFQFN Exposed Pad | 24-QFN (4x4) | Inverting，Non-Inverting | Single | Low-Side | 1 | SiC MOSFET | - | 8ns，8ns | |||
|
|
ON Semiconductor |
2,798
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SIC MOSFET DRIVER
|
Cut Tape (CT) | - | 10 V ~ 22 V | -55°C ~ 150°C (TJ) | 24-VFQFN Exposed Pad | 24-QFN (4x4) | Inverting，Non-Inverting | Single | Low-Side | 1 | SiC MOSFET | - | 8ns，8ns | |||
|
|
ON Semiconductor |
2,798
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SIC MOSFET DRIVER
|
- | - | 10 V ~ 22 V | -55°C ~ 150°C (TJ) | 24-VFQFN Exposed Pad | 24-QFN (4x4) | Inverting，Non-Inverting | Single | Low-Side | 1 | SiC MOSFET | - | 8ns，8ns |
