- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 40
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Texas Instruments |
5,125
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPL MOSFET DRVR TO-220-5
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Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Single | 1 | IGBT，N-Channel MOSFET | 85ns，85ns | 0.8V，2V | ||
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|
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Texas Instruments |
3,352
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT MOSFET DRVR 8-DIP
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | 1 | IGBT，N-Channel MOSFET | 85ns，85ns | 0.8V，2V | ||
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|
|
Texas Instruments |
988
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH CURRENT FET DRVR TO220-5
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Single | 1 | IGBT，N-Channel MOSFET | 85ns，85ns | 0.8V，2V | ||
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|
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Renesas Electronics America Inc. |
802
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | ||
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|
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Renesas Electronics America Inc. |
324
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Independent | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | ||
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|
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Renesas Electronics America Inc. |
2,424
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | ||
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|
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Texas Instruments |
235
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC HIGH CURRENT FET DRVR 16-SOIC
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Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Single | 1 | IGBT，N-Channel MOSFET | 85ns，85ns | 0.8V，2V | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Independent | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Independent | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Independent | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 980 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | ||
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|
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 100 MPQ: 1
|
IC HIGH CURRENT FET DRVR TO220-5
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Single | 1 | IGBT，N-Channel MOSFET | 85ns，85ns | 0.8V，2V | ||
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|
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 100 MPQ: 1
|
IC HIGH CURRENT FET DRVR 8-DIP
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | 1 | IGBT，N-Channel MOSFET | 85ns，85ns | 0.8V，2V | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 80 MPQ: 1
|
IC HIGH CURRENT FET DRVR 16-SOIC
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Single | 1 | IGBT，N-Channel MOSFET | 85ns，85ns | 0.8V，2V | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC HIGH CURRENT FET DRIVER 8-DIP
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | 1 | IGBT，N-Channel MOSFET | 85ns，85ns | 0.8V，2V | ||
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|
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC HIGH CURRENT FET DRIVER 8-DIP
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | 1 | IGBT，N-Channel MOSFET | 85ns，85ns | 0.8V，2V | ||
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|
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Texas Instruments |
6
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC HIGH CURRENT FET DRVR TO220-5
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Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Single | 1 | IGBT，N-Channel MOSFET | 85ns，85ns | 0.8V，2V | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 980 MPQ: 1
|
MOSFET DRIVER 2CH 6A 8SOIC
|
Tube | 7.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | 2 | N-Channel MOSFET | 20ns，20ns | 2.4V，9.6V |
