Découvrez les produits 84
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
2SC0106T2A1-12
Power Integrations
558
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL GATE DRIVER 6A
Tray SCALE-2 14.5 V ~ 15.5 V -40°C ~ 105°C (TA) Module Module Surface Mount - Independent Half-Bridge IGBT 1200V 20ns,13ns -
2SD106AI-17 UL
Power Integrations
107
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL GATE DRIVER 6A
Tray SCALE-1 15V -40°C ~ 85°C (TA) Module Module Surface Mount - - Half-Bridge IGBT,N-Channel,P-Channel MOSFET - 100ns,80ns -
ISL89164FRTBZ
Renesas Electronics America Inc.
2,429
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89164FBEAZ
Renesas Electronics America Inc.
1,833
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89163FRTAZ
Renesas Electronics America Inc.
1,135
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89165FBEBZ
Renesas Electronics America Inc.
802
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89163FBEBZ
Renesas Electronics America Inc.
559
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89164FBEBZ
Renesas Electronics America Inc.
486
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89163FBEAZ
Renesas Electronics America Inc.
335
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89165FRTAZ
Renesas Electronics America Inc.
324
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89165FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89165FBEAZ-T
Renesas Electronics America Inc.
2,424
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Cut Tape (CT) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89163FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89163FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89164FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89164FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89165FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89165FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
AUIRB24427STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER 24V 6A 8SOIC
Tape & Reel (TR) - 5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC Surface Mount Non-Inverting Independent Low-Side N-Channel MOSFET - 33ns,33ns (Max) 0.8V,2.5V
ISL89163FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side N-Channel MOSFET - 20ns,20ns 1.22V,2.08V