Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 280
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
ISL89165FRTBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
MAX4420ESA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SGL 6A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V
ISL89165FBEAZ
Renesas Electronics America Inc.
Enquête
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-
MOQ: 980  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
UC2710TG3
Texas Instruments
Enquête
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-
MOQ: 100  MPQ: 1
IC HIGH CURRENT FET DRVR TO220-5
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 85ns,85ns 0.8V,2V
UC3710NG4
Texas Instruments
Enquête
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MOQ: 100  MPQ: 1
IC HIGH CURRENT FET DRVR 8-DIP
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 85ns,85ns 0.8V,2V
UC3710DWG4
Texas Instruments
Enquête
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-
MOQ: 80  MPQ: 1
IC HIGH CURRENT FET DRVR 16-SOIC
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 85ns,85ns 0.8V,2V
UC2710N
Texas Instruments
Enquête
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MOQ: 50  MPQ: 1
IC HIGH CURRENT FET DRIVER 8-DIP
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 85ns,85ns 0.8V,2V
UC2710NG4
Texas Instruments
Enquête
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MOQ: 50  MPQ: 1
IC HIGH CURRENT FET DRIVER 8-DIP
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 85ns,85ns 0.8V,2V
UC2710T
Texas Instruments
6
3 jours
-
MOQ: 1  MPQ: 1
IC HIGH CURRENT FET DRVR TO220-5
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 85ns,85ns 0.8V,2V
MAX4420CPA
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC DRIVER MOSFET SNGL 6A HS 8DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V
MAX4429CPA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER MOSFET SNGL 6A HS 8DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V
MAX4420CSA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER MOSFET 6A HS 8-SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V
MAX4420EPA
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC DRIVER MOSFET 6A HS 8-DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V
MAX4420ESA
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC DRIVER MOSFET 6A HS 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V
IX6R11S3
IXYS
Enquête
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MOQ: 46  MPQ: 1
HALF BRIDGE DRIVER 16-SOIC
Tube - 10 V ~ 35 V -40°C ~ 125°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.6V
IX6R11S6
IXYS
Enquête
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MOQ: 42  MPQ: 1
IC BRIDGE DRIVER FOR N-CH MOSFET
Tube - 10 V ~ 35 V -40°C ~ 125°C (TA) 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.6V
IX6R11S3T/R
IXYS
Enquête
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MOQ: 1000  MPQ: 1
IC DRVR HALF BRIDGE 4A 16-SOIC
Tape & Reel (TR) - 10 V ~ 35 V -40°C ~ 125°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.6V
IX6R11S6T/R
IXYS
Enquête
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MOQ: 1000  MPQ: 1
IC DRVR HALF BRIDGE 4A 18-SOIC
Tape & Reel (TR) - 10 V ~ 35 V -40°C ~ 125°C (TA) 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.6V
MAX4429ESA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V
MAX4429CSA+T
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V