Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 280
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
ISL89165FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89165FBEAZ-T
Renesas Electronics America Inc.
2,424
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Cut Tape (CT) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
UC3710DW
Texas Instruments
235
3 jours
-
MOQ: 1  MPQ: 1
IC HIGH CURRENT FET DRVR 16-SOIC
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 85ns,85ns 0.8V,2V
MAX4429CPA+
Maxim Integrated
55
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET SNGL 6A HS 8DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V
MAX8811EEE+
Maxim Integrated
83
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR DL PHASE HS 16-QSOP
Tube - 4.5 V ~ 7 V -40°C ~ 150°C (TJ) 16-SSOP (0.154",3.90mm Width) 16-QSOP Surface Mount Non-Inverting Synchronous Half-Bridge 4 N-Channel MOSFET 30V 14ns,9ns 0.8V,2.6V
ISL89163FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89163FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89164FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89164FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89165FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89165FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
AUIRB24427STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER 24V 6A 8SOIC
Tape & Reel (TR) - 5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 33ns,33ns (Max) 0.8V,2.5V
ISL89163FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89163FBEBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89164FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V
ISL89164FBEBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89165FBEBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
MAX4420CSA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SGL 6A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V
ISL89163FRTBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V
ISL89164FRTAZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V