- Series:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Mounting Type:
-
- Channel Type:
-
- Driven Configuration:
-
- Gate Type:
-
- High Side Voltage - Max (Bootstrap):
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Conditions sélectionnées:
Découvrez les produits 749
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Texas Instruments |
2,415
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A INV FET DRIVER 8-SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | ||||
Renesas Electronics America Inc. |
1,293
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns | 0.8V,2.4V | ||||
Renesas Electronics America Inc. |
1,649
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tube | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | ||||
Maxim Integrated |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns,65ns | - | ||||
Maxim Integrated |
163
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 12-TQFN
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 12-WQFN Exposed Pad | 12-TQFN (4x4) | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns,65ns | - | ||||
Maxim Integrated |
190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns,65ns | - | ||||
Maxim Integrated |
187
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns,65ns | - | ||||
Renesas Electronics America Inc. |
6,000
|
3 jours |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRVR SYNC BUCK 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN-EP (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 8ns,8ns | 0.5V,2V | ||||
Renesas Electronics America Inc. |
10,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC BUCK 8DFN
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN-EP (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 8ns,8ns | 0.5V,2V | ||||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | ||||
Texas Instruments |
4,997
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | ||||
Texas Instruments |
4,997
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
- | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | ||||
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | ||||
Renesas Electronics America Inc. |
250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173",4.40mm Width) Exposed Pad | 14-HTSSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.8V,4V | ||||
Renesas Electronics America Inc. |
379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Cut Tape (CT) | Automotive,AEC-Q100 | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173",4.40mm Width) Exposed Pad | 14-HTSSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.8V,4V | ||||
Renesas Electronics America Inc. |
379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
- | Automotive,AEC-Q100 | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173",4.40mm Width) Exposed Pad | 14-HTSSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.8V,4V | ||||
Renesas Electronics America Inc. |
2,336
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
|
Tube | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | ||||
Renesas Electronics America Inc. |
965
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Tube | Automotive,AEC-Q100 | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173",4.40mm Width) Exposed Pad | 14-HTSSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.8V,4V | ||||
Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH SID POWER DRIVER TO220-5
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Through Hole | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns,60ns | 0.8V,2.2V |