- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 377
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | ||
|
|
|
Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | ||
|
|
|
Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | ||
|
|
|
Infineon Technologies |
22,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tape & Reel (TR) | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
|
|
|
Infineon Technologies |
22,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Cut Tape (CT) | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
|
|
|
Infineon Technologies |
22,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
- | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
|
|
|
Renesas Electronics America Inc. |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
11,838
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
11,838
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
- | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | ||
|
|
|
Renesas Electronics America Inc. |
9,420
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | ||
|
|
|
Renesas Electronics America Inc. |
9,420
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
- | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | ||
|
|
|
Renesas Electronics America Inc. |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
- | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | ||
|
|
|
Infineon Technologies |
7,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tape & Reel (TR) | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
|
|
|
Infineon Technologies |
7,166
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Cut Tape (CT) | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
|
|
|
Infineon Technologies |
7,166
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
|
|
|
Infineon Technologies |
8,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
|
|
|
Infineon Technologies |
8,823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V |
