- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Conditions sélectionnées:
Découvrez les produits 268
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Maxim Integrated |
4,635
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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|
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Maxim Integrated |
3,509
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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Maxim Integrated |
1,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET DUAL NON-INV 8SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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|
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Infineon Technologies |
8,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
|
- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
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|
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Infineon Technologies |
8,823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
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- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
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Renesas Electronics America Inc. |
4,780
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CMOS QUAD 40MHZ 16QFN
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- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 0.8V，2V | ||
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|
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Renesas Electronics America Inc. |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CMOS QUAD 40MHZ 16-QSOP
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- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SSOP (0.154"，3.90mm Width) | 16-QSOP | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 0.8V，2V | ||
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|
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Maxim Integrated |
384
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 12-TQFN
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- | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 12-WQFN Exposed Pad | 12-TQFN (4x4) | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns，65ns | 0.8V，2V | ||
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|
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IXYS Integrated Circuits Division |
4,958
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
DUAL LOW SIDE MOSFET DRIVER
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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|
|
IXYS Integrated Circuits Division |
1,297
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 2A DUAL LO SIDE 8-SO
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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|
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Texas Instruments |
3,669
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS FET DRIVER 8-SOIC
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | ||
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|
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Texas Instruments |
4,512
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | ||
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|
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Renesas Electronics America Inc. |
5,790
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HS DUAL MOSFET 8-SOIC
|
- | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | ||
|
|
|
Renesas Electronics America Inc. |
1,303
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HS DUAL MOSFET 8-SOIC
|
- | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | ||
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|
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Texas Instruments |
6,421
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRDG 100V 2A 8-SOIC
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 570ns，430ns | 2.3V，- | ||
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|
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Infineon Technologies |
1,792
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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|
|
Infineon Technologies |
1,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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|
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Maxim Integrated |
1,523
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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|
|
Renesas Electronics America Inc. |
882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CMOS QUAD 40MHZ 16-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
184
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 8-SOIC
|
- | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V |
