- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 19
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Infineon Technologies |
7,000
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3 jours |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tape & Reel (TR) | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
7,166
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
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Cut Tape (CT) | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
7,166
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
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- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
1,792
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HI/LO SIDE 14-DIP
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Tube | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
1,498
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tube | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE DVR HIGH/LOW 600V 16SOIC
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Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT，N-Channel，P-Channel MOSFET | 9.4ns，9.7ns | 6V，9.5V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HIGH/LOW 600V 16SOIC
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT，N-Channel，P-Channel MOSFET | 9.4ns，9.7ns | 6V，9.5V | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC GATE DRVR 600V HI/LO 14DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Half-Bridge | IGBT，N-Channel，P-Channel MOSFET | 9.4ns，9.7ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tube | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 175 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14-DIP
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Tube | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14-DIP
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Tube | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | 14-PDIP | Through Hole | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16-DIP
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Tube | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | 16-PDIP | Through Hole | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tape & Reel (TR) | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 150 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16DIP
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Tube | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | 16-PDIP | Through Hole | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14DIP
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Tube | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | 14-PDIP | Through Hole | Half-Bridge | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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Tape & Reel (TR) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | High-Side | IGBT，N-Channel MOSFET | 15ns，15ns | 0.6V，3.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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Cut Tape (CT) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | High-Side | IGBT，N-Channel MOSFET | 15ns，15ns | 0.6V，3.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | High-Side | IGBT，N-Channel MOSFET | 15ns，15ns | 0.6V，3.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC DVR DUAL HIGH SIDE 16-SOIC
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Tube | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | High-Side | IGBT，N-Channel MOSFET | 15ns，15ns | 0.6V，3.5V |
