- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 65
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Infineon Technologies |
8,446
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
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Powerex Inc. |
1,469
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR FOR IGBT MOD
|
Bulk | - | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 500ns，300ns | - | ||
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Texas Instruments |
4,512
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | ||
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Infineon Technologies |
1,792
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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Maxim Integrated |
1,523
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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Texas Instruments |
3,616
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DUAL 2A MOSFET DRIVER 8-DIP
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Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | ||
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Renesas Electronics America Inc. |
1,372
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC PWR MOSFET DVR DUAL HS 8DIP
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Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | ||
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Texas Instruments |
1,000
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH SID POWER DRIVER TO220-5
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Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | ||
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Texas Instruments |
217
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL 2A COMP FET DRIVER 8-DIP
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Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | ||
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Renesas Electronics America Inc. |
531
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | ||
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Texas Instruments |
561
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC COMPLEMENT PWR DRVR TO-220-5
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Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | ||
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IXYS Integrated Circuits Division |
149
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
MOSFET N-CH 2A DUAL LO SIDE 8-DI
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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Maxim Integrated |
92
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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Texas Instruments |
629
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
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Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | ||
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Maxim Integrated |
76
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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Maxim Integrated |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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Texas Instruments |
241
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
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Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
2A MOSFET 8 DIP DUAL INV/NON-INV
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
2A 8 DIP DUAL INVERTING
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
|
Bulk | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V |
