- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 749
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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IXYS |
Enquête
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- |
-
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MOQ: 275 MPQ: 1
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IC DRVR HALF BRIDGE 2A 14DIP
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Tube | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 8ns，7ns | 6V，9.6V | ||
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IXYS |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC GATE DRIVER 2A 6-DFN
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Bulk | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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IXYS |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC GATE DRIVER DUAL 2A 6-DFN
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Bulk | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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IXYS |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC GATE DRIVER DUAL 2A 6-DFN
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Bulk | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC GATE DRIVER 5V 10DFN
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Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRVR COTS
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Tube | Military，MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | |||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRVR COTS
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Tube | Military，MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER HI SPEED 16VQFN
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Tape & Reel (TR) | - | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER HI SPEED 16VQFN
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Tape & Reel (TR) | - | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V |
