- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 749
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Microchip Technology |
1,035
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 2A 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 12ns，15ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
1,328
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 100V CMOS 8SOIC
|
Tube | - | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 400ns，400ns | 3V，8V | |||
|
|
Microchip Technology |
588
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH/LOW 8DFN
|
Tube | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 36V | 10ns，10ns | - | |||
|
|
Microchip Technology |
355
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A SYNC BUCK 8-DFN
|
Tube | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 10ns，10ns | 0.5V，2V | |||
|
|
Microchip Technology |
6,600
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HIGH/LOW 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 36V | 10ns，10ns | - | |||
|
|
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16QFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13 V | -20°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 6ns，6ns | 0.3V，1.7V | |||
|
|
Microchip Technology |
279
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HALF BRIDGE 8-SOIC
|
Tube | - | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 400ns，400ns | 0.8V，2.2V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
Tape & Reel (TR) | - | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | |||
|
|
Microchip Technology |
3,289
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
Cut Tape (CT) | - | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | |||
|
|
Microchip Technology |
3,289
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
- | - | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 2A HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A HS 8SOIC
|
- | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 12QFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13 V | -20°C ~ 125°C (TJ) | 12-VQFN Exposed Pad | 12-QFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 6ns，6ns | 0.3V，1.2V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 12QFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13 V | -20°C ~ 125°C (TJ) | 12-VQFN Exposed Pad | 12-QFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 6ns，6ns | 0.3V，1.2V | |||
|
|
Microchip Technology |
1,011
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 12QFN
|
Cut Tape (CT) | - | 4.5 V ~ 13 V | -20°C ~ 125°C (TJ) | 12-VQFN Exposed Pad | 12-QFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 6ns，6ns | 0.3V，1.2V | |||
|
|
Microchip Technology |
1,011
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 12QFN
|
- | - | 4.5 V ~ 13 V | -20°C ~ 125°C (TJ) | 12-VQFN Exposed Pad | 12-QFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 6ns，6ns | 0.3V，1.2V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16QFN
|
Tape & Reel (TR) | - | 5 V ~ 12 V | -20°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 6ns，6ns | 0.3V，1.7V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16QFN
|
Tape & Reel (TR) | - | 5 V ~ 12 V | -20°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 6ns，6ns | 0.3V，1.7V | |||
|
|
Maxim Integrated |
107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR COTS
|
Tube | Military，MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V |
