Number of Drivers:
Découvrez les produits 749
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
LM5100BSD
Texas Instruments
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE HV 10WSON
Cut Tape (CT) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 570ns,430ns 2.3V,-
LM5100BSD
Texas Instruments
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE HV 10WSON
- - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 570ns,430ns 2.3V,-
LM5101BSD
Texas Instruments
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER HALF-BRIDGE HV 10WSON
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 570ns,430ns 2.3V,-
LM5101BSD
Texas Instruments
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE HV 10WSON
Cut Tape (CT) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 570ns,430ns 2.3V,-
LM5101BSD
Texas Instruments
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE HV 10WSON
- - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 570ns,430ns 2.3V,-
ISL6605CBZR5168
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNCH RECT 8SOIC
Tube - 4.5 V ~ 5.5 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V 8ns,8ns 1V,2V
ISL6605CRZR5168
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC MOSFET DRVR SYNCH RECT 8QFN
Tube - 4.5 V ~ 5.5 V 0°C ~ 125°C (TJ) 8-VQFN Exposed Pad 8-QFN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V 8ns,8ns 1V,2V
ISL78420ARTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC DRVR HALF BRIDGE 10DFN
Tube Automotive,AEC-Q100 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.8V,4V
ISL78420ARTBZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC DRVR HALF BRIDGE 9DFN
Tube Automotive,AEC-Q100 8 V ~ 14 V -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.8V,4V
CHL8515CRT
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
Tape & Reel (TR) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 10ns,8ns 0.8V,1V
CHL8515CRT
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
Cut Tape (CT) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 10ns,8ns 0.8V,1V
CHL8515CRT
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
- - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 10ns,8ns 0.8V,1V
CHL8550CRT
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
Tape & Reel (TR) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 10ns,8ns 0.8V,1V
CHL8550CRT
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
Cut Tape (CT) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 10ns,8ns 0.8V,1V
CHL8550CRT
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
- - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 10ns,8ns 0.8V,1V
MAX5062AASA
Maxim Integrated
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER HALF BRDG HS 8-SOIC
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns -
MAX5062AASA-T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER HALF BRDG HS 8-SOIC
Tape & Reel (TR) - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns -
MAX5062BASA
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns -
MAX5062BASA-T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tape & Reel (TR) - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns -
MAX5062CASA
Maxim Integrated
Enquête
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MOQ: 1000  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns -