- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 749
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR SYNC BUCK 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 8ns,8ns | - | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC DVR DUAL HIGH SIDE 16-SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DVR MOSFET DUAL-CH 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC DVR MOSFET DUAL-CH 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 8-MLPD
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Tape & Reel (TR) | - | 6.5 V ~ 7.5 V | 0°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 5ns,5ns | - | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET GATE DRIVER SON-8
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Tape & Reel (TR) | - | 6.5 V ~ 7.5 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SON | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 5ns,5ns | - | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDGE HI FREQ 8SOIC
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Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 3.7V,7.4V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8QFN
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Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | 0°C ~ 125°C (TJ) | 8-VQFN Exposed Pad | 8-QFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 8ns,8ns | 1V,2V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
|
IC DVR HALF-BRDGE HI FREQ 8SOIC
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Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 3.7V,7.4V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
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IC BUCK SYNC DRIVER DL TDSON10-2
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Tape & Reel (TR) | - | 4.5 V ~ 6 V | -25°C ~ 150°C (TJ) | 10-VFDFN Exposed Pad | TDSON-10-2 | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 10ns,10ns | 1.3V,1.9V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
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Tube | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 3.7V,7.93V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 3.7V,7.93V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
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Tube | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 3.7V,7.93V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 3.7V,7.93V | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
Tube | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.4V,2.2V |