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Découvrez les produits 749
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
ISL6620IBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DVR SYNC BUCK 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 8ns,8ns -
IRS21853STRPBF
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V
IRS21853STRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
Cut Tape (CT) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V
IRS21853STRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
- - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V
IRS21853SPBF
Infineon Technologies
Enquête
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MOQ: 225  MPQ: 1
IC DVR DUAL HIGH SIDE 16-SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V
ISL89412IP
Renesas Electronics America Inc.
Enquête
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MOQ: 600  MPQ: 1
IC DRVR MOSFET DUAL-CH 8DIP
Tube - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V
ISL89410IP
Renesas Electronics America Inc.
Enquête
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MOQ: 600  MPQ: 1
IC DRVR MOSFET DUAL-CH 8DIP
Tube - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V
ISL89410IPZ
Renesas Electronics America Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DVR MOSFET DUAL-CH 8DIP
Tube - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V
ISL89412IPZ
Renesas Electronics America Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DVR MOSFET DUAL-CH 8DIP
Tube - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V
IR3519MTRPBF
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC MOSFET GATE DRIVER 8-MLPD
Tape & Reel (TR) - 6.5 V ~ 7.5 V 0°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-MLP (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 5ns,5ns -
IR3519STRPBF
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET GATE DRIVER SON-8
Tape & Reel (TR) - 6.5 V ~ 7.5 V 0°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SON Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 5ns,5ns -
ISL2100AABZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DVR HALF-BRDGE HI FREQ 8SOIC
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 3.7V,7.4V
ISL6605CRZ-TK
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC MOSFET DVR SYNC BUCK 8QFN
Tape & Reel (TR) - 4.5 V ~ 5.5 V 0°C ~ 125°C (TJ) 8-VQFN Exposed Pad 8-QFN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V 8ns,8ns 1V,2V
ISL2100AABZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC DVR HALF-BRDGE HI FREQ 8SOIC
Tube - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 3.7V,7.4V
PX3516ADDGR4XTMA1
Infineon Technologies
Enquête
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MOQ: 4000  MPQ: 1
IC BUCK SYNC DRIVER DL TDSON10-2
Tape & Reel (TR) - 4.5 V ~ 6 V -25°C ~ 150°C (TJ) 10-VFDFN Exposed Pad TDSON-10-2 Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 30V 10ns,10ns 1.3V,1.9V
HIP2120FRTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 3.7V,7.93V
HIP2120FRTAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tape & Reel (TR) - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 3.7V,7.93V
HIP2120FRTBZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tube - 8 V ~ 14 V -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 3.7V,7.93V
HIP2120FRTBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tape & Reel (TR) - 8 V ~ 14 V -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 3.7V,7.93V
HIP2121FRTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.4V,2.2V