- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 749
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 100 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 100 MPQ: 1
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IC HALF-BRIDGE MOSFET DVR 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | - | ||
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Maxim Integrated |
5
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 175 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 175 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14-DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR MOSFET DUAL NON-INV 8SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | 14-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16-SOIC
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16-SOIC
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Tape & Reel (TR) | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | 16-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14-DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | 14-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16-DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | 16-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 67 MPQ: 1
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IC DRIVER SYNCH RECT 20-SSOP
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Tube | - | 4 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 20-SSOP (0.209"，5.30mm Width) | 20-SSOP | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tape & Reel (TR) | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 18 MPQ: 1
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IC DRIVER SYNC 5V 2A 20-DIP
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Tube | - | 4 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-DIP | Through Hole | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1500 MPQ: 1
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IC DRIVER RECT SYNC 5V 2A 20SSOP
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Tape & Reel (TR) | - | 4 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 20-SSOP (0.209"，5.30mm Width) | 20-SSOP | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V |
