- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 749
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Renesas Electronics America Inc. |
90
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRDG HF 100V 2A 9DFN
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Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 3.7V，7.4V | ||
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Maxim Integrated |
6
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | ||
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Analog Devices Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR 2A DL HS 8SOIC
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Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | ||
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Analog Devices Inc. |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 2A DL HS 8SOIC
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Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | ||
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Analog Devices Inc. |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 2A DL HS 8SOIC
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- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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Tape & Reel (TR) | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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Cut Tape (CT) | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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- | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | ||
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Maxim Integrated |
2
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC HALF-BRIDGE MOSFET DVR 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | ||
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Maxim Integrated |
1
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns，65ns | 0.8V，2V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
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IC BUCK SYNC DRIVER DL TDSON10
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Tape & Reel (TR) | - | 4.5 V ~ 8 V | -40°C ~ 150°C (TJ) | 10-VFDFN Exposed Pad | 10-TDSON (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 10ns，10ns | 0.8V，2.5V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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2A MOSFET 8 DFN DUAL INV/NON-INV
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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2A 8 SOIC DUAL INV/NON-INVERTING
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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2A 8 DFN DUAL INVERTING
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
2A 8 SOIC DUAL INVERTING
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
2A 8 LEAD SOIC DUAL NON INVERTIN
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC GATE DVR 2A DUAL HS 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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Semtech Corporation |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 2A LOWSIDE SOT23-5
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Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | SC-74A，SOT-753 | SOT-23-5 | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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2A MOSFET 8 DIP DUAL INV/NON-INV
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
2A 8 DIP DUAL INVERTING
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V |
