- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 162
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
1,725
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC MOSFET DVR NON-INV SOT23-5
|
- | Automotive，AEC-Q100 | 4 V ~ 14 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC 1CH HI-SPD MOSFET DVR SOT23-5
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -55°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
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|
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Texas Instruments |
1,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC 1CH HI-SPD MOSFET DVR SOT23-5
|
Cut Tape (CT) | - | 4 V ~ 14 V | -55°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
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Texas Instruments |
1,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC 1CH HI-SPD MOSFET DVR SOT23-5
|
- | - | 4 V ~ 14 V | -55°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC 1CH HI-SPD MOSFET DVR SOT23-5
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -55°C ~ 125°C (TA) | Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
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|
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Texas Instruments |
549
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC 1CH HI-SPD MOSFET DVR SOT23-5
|
Cut Tape (CT) | - | 4 V ~ 14 V | -55°C ~ 125°C (TA) | Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
549
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC 1CH HI-SPD MOSFET DVR SOT23-5
|
- | - | 4 V ~ 14 V | -55°C ~ 125°C (TA) | Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
|
Tape & Reel (TR) | μHVIC | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 10ns，10ns | 0.6V，2.7V | 1.5A，1.5A | ||
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Infineon Technologies |
2,237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
|
Cut Tape (CT) | μHVIC | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 10ns，10ns | 0.6V，2.7V | 1.5A，1.5A | ||
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|
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Infineon Technologies |
2,237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
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- | μHVIC | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 10ns，10ns | 0.6V，2.7V | 1.5A，1.5A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
|
Tape & Reel (TR) | μHVIC | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 10ns，10ns | 0.6V，2.7V | 1.5A，1.5A | ||
|
|
|
Infineon Technologies |
1,721
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
|
Cut Tape (CT) | μHVIC | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 10ns，10ns | 0.6V，2.7V | 1.5A，1.5A | ||
|
|
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Infineon Technologies |
1,721
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
|
- | μHVIC | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 10ns，10ns | 0.6V，2.7V | 1.5A，1.5A | ||
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Texas Instruments |
750
|
3 jours |
-
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MOQ: 250 MPQ: 1
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IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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|
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Texas Instruments |
995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
|
|
|
Texas Instruments |
995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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|
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Texas Instruments |
500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Tape & Reel (TR) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 1.2V，2.2V | 2.5A，2.5A | ||
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|
|
Texas Instruments |
648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Cut Tape (CT) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 1.2V，2.2V | 2.5A，2.5A | ||
|
|
|
Texas Instruments |
648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 1.2V，2.2V | 2.5A，2.5A | ||
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|
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Texas Instruments |
250
|
3 jours |
-
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MOQ: 250 MPQ: 1
|
IC INVERTING FET DRVR SOT23-5
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A |
