Découvrez les produits 19
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Input Type Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
IRS44273LTRPBF
Infineon Technologies
15,000
3 jours
-
MOQ: 3000  MPQ: 1
IC DRIVER LOW SIDE 1.5A SOT23-5
Tape & Reel (TR) μHVIC 10.2 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 25ns,25ns 0.8V,2.5V
IRS44273LTRPBF
Infineon Technologies
15,397
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER LOW SIDE 1.5A SOT23-5
Cut Tape (CT) μHVIC 10.2 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 25ns,25ns 0.8V,2.5V
IRS44273LTRPBF
Infineon Technologies
15,397
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER LOW SIDE 1.5A SOT23-5
- μHVIC 10.2 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 25ns,25ns 0.8V,2.5V
IR44272LTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
Tape & Reel (TR) μHVIC 5 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 10ns,10ns 0.6V,2.7V
IR44272LTRPBF
Infineon Technologies
2,237
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
Cut Tape (CT) μHVIC 5 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 10ns,10ns 0.6V,2.7V
IR44272LTRPBF
Infineon Technologies
2,237
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
- μHVIC 5 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 10ns,10ns 0.6V,2.7V
IR44273LTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
Tape & Reel (TR) μHVIC 5 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 10ns,10ns 0.6V,2.7V
IR44273LTRPBF
Infineon Technologies
1,721
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
Cut Tape (CT) μHVIC 5 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 10ns,10ns 0.6V,2.7V
IR44273LTRPBF
Infineon Technologies
1,721
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
- μHVIC 5 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 10ns,10ns 0.6V,2.7V
MCP1415T-E/OT
Microchip Technology
12,000
3 jours
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR 1.5A HS SOT23-5
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V
MCP1415T-E/OT
Microchip Technology
16,503
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1.5A HS SOT23-5
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V
MCP1415T-E/OT
Microchip Technology
16,503
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1.5A HS SOT23-5
- - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V
MCP1416T-E/OT
Microchip Technology
12,000
3 jours
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR 1.5A HS SOT23-5
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V
MCP1416T-E/OT
Microchip Technology
13,745
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1.5A HS SOT23-5
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V
MCP1416T-E/OT
Microchip Technology
13,745
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1.5A HS SOT23-5
- - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V
MCP1416RT-E/OT
Microchip Technology
Enquête
-
-
MOQ: 3000  MPQ: 1
IC PWR MOSFET DVR 1.5A SOT23-5
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V
MCP1415T-E/OTVAO
Microchip Technology
Enquête
-
-
MOQ: 0  MPQ: 1
TINY 1.5 AMP MOSFET DRIVER
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C (TA) Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,21ns 0.8V,2.4V
MCP1416RT-E/OTVAO
Microchip Technology
Enquête
-
-
MOQ: 0  MPQ: 1
1.5A SNGL MOSFET DRVR
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C (TA) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,21ns 0.8V,2.4V
MCP1416T-E/OTVAO
Microchip Technology
Enquête
-
-
MOQ: 0  MPQ: 1
TINY 1.5 AMP MOSFET DRIVER
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C (TA) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,21ns 0.8V,2.4V