- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 48
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
4,831
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
4,831
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
1,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
2,920
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
2,920
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
5,150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
5,150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
- | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
1,052
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
1,052
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC INVERTING FET DRVR SOT-23-5
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
5,525
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTING FET DRVR SOT-23-5
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
5,525
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTING FET DRVR SOT-23-5
|
- | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Tape & Reel (TR) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | High-Side or Low-Side | IGBT，N-Channel MOSFET | 15ns，10ns | 1.2V，2.2V | 2.5A，2.5A | ||
|
|
|
Texas Instruments |
3,182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Cut Tape (CT) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | High-Side or Low-Side | IGBT，N-Channel MOSFET | 15ns，10ns | 1.2V，2.2V | 2.5A，2.5A | ||
|
|
|
Texas Instruments |
3,182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | High-Side or Low-Side | IGBT，N-Channel MOSFET | 15ns，10ns | 1.2V，2.2V | 2.5A，2.5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC INVERTING FET DRVR SOT-23-5
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
1,857
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTING FET DRVR SOT-23-5
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | 14ns，14ns | 1V，4V | 2A，2A |
