- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 135
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting | Low-Side | IGBT,N-Channel MOSFET | 8ns,7ns | - | 4A,4A | ||||
Texas Instruments |
4,831
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting | Low-Side | IGBT,N-Channel MOSFET | 8ns,7ns | - | 4A,4A | ||||
Texas Instruments |
4,831
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting | Low-Side | IGBT,N-Channel MOSFET | 8ns,7ns | - | 4A,4A | ||||
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC NONINVERT FET DRVR SOT-23-5
|
Tape & Reel (TR) | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | 14ns,14ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
13,767
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NONINVERT FET DRVR SOT-23-5
|
Cut Tape (CT) | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | 14ns,14ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
13,767
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NONINVERT FET DRVR SOT-23-5
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | 14ns,14ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
9,250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting,Non-Inverting | Low-Side | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,4A | ||||
Texas Instruments |
11,741
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting,Non-Inverting | Low-Side | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,4A | ||||
Texas Instruments |
11,741
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting,Non-Inverting | Low-Side | IGBT,N-Channel MOSFET | 8ns,7ns | 1V,2.4V | 4A,4A | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
Tape & Reel (TR) | 5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | N-Channel MOSFET | 19ns,13ns | 0.8V,2V | 2.5A,2.8A | ||||
ON Semiconductor |
5,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
Cut Tape (CT) | 5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | N-Channel MOSFET | 19ns,13ns | 0.8V,2V | 2.5A,2.8A | ||||
ON Semiconductor |
5,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
- | 5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | N-Channel MOSFET | 19ns,13ns | 0.8V,2V | 2.5A,2.8A | ||||
Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Non-Inverting | Low-Side | IGBT,N-Channel MOSFET | 8ns,7ns | - | 4A,4A | ||||
Texas Instruments |
11,736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Non-Inverting | Low-Side | IGBT,N-Channel MOSFET | 8ns,7ns | - | 4A,4A | ||||
Texas Instruments |
11,736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Non-Inverting | Low-Side | IGBT,N-Channel MOSFET | 8ns,7ns | - | 4A,4A | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
Tape & Reel (TR) | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | 14ns,14ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
4,373
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
Cut Tape (CT) | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | 14ns,14ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
4,373
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | 14ns,14ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Tape & Reel (TR) | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | Non-Inverting | High-Side or Low-Side | IGBT,N-Channel MOSFET | 15ns,7ns | 1.2V,2.2V | 2.5A,5A | ||||
Texas Instruments |
7,237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Cut Tape (CT) | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | Non-Inverting | High-Side or Low-Side | IGBT,N-Channel MOSFET | 15ns,7ns | 1.2V,2.2V | 2.5A,5A |