- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 182
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
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-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 4.5A DUAL 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 4.0A DUAL 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4A，4A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 4.0A DUAL 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4A，4A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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IC MOSFET DVR 4.0A DUAL 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4A，4A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 9A N-INV 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 60ns，60ns | 0.8V，2.4V | 9A，9A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 9A INV 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 60ns，60ns | 0.8V，2.4V | 9A，9A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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IC MOSFET DRIVER 9A INV 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 60ns，60ns | 0.8V，2.4V | 9A，9A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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IC MOSFET DRIVER 9A N-INV 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 60ns，60ns | 0.8V，2.4V | 9A，9A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 9A INV 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 38ns，33ns | 0.8V，2.4V | 10A，10A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRVR 9A N-INV 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 38ns，33ns | 0.8V，2.4V | 10A，10A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 12A HS 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 30ns，32ns | 0.8V，2.4V | 13A，13A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 12A HS 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 30ns，32ns | 0.8V，2.4V | 13A，13A | |||
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Microchip Technology |
20
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 4.0A DUAL 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4A，4A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 6A HS 8DFN
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Tape & Reel (TR) | - | 7 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-EP (3x3) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 6A，6A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC MOSFET DRIVER 6A HS 8DFN
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Tube | - | 7 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-EP (3x3) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 6A，6A | |||
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IXYS |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC GATE DRIVER 4A 8-DFN
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Bulk | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (4x5) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DRIVER 4A 8-DFN
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Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (4x5) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC GATE DRIVER 4A 8-DFN
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Bulk | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (4x5) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DRIVER 4A 8-DFN
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Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (4x5) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
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HIGH PERFORMANCE DUAL MOS
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- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-DFN (4x4) | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 200V | 8ns，7ns | 0.8V，2.7V | 4A，4A |
