- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 91
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
42,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
10,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | 2A，2A | ||
|
|
|
IXYS Integrated Circuits Division |
4,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
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- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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Texas Instruments |
20,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns，5.5ns | 1.3V，2.7V | 4A，4A | ||
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|
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Texas Instruments |
7,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns，5.5ns | 1.3V，2.7V | 4A，4A | ||
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|
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Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | - | ||
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|
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Texas Instruments |
7,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8VSON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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|
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Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
- | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 15ns，10ns | 0.7V，4V | - | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SON
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Automotive，AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | 2A，2A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8-SON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 3V，8V | 3A，3A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8VSON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 3V，8V | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns，5.5ns | 2.4V，5.8V | 4A，4A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC SINK SYNC MOSFET DVR 4A 8SON
|
- | 6.8 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8-SON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A MOSFET 8 DFN DUAL INV/NON-INV
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8 DFN DUAL INVERTING
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 2A DUAL HS 8DFN
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A |
