- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 21
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns,10ns | - | ||||
Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns,10ns | - | ||||
Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns,10ns | - | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SON
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns,10ns | - | ||||
Texas Instruments |
3,252
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SON
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns,10ns | - | ||||
Texas Instruments |
3,252
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SON
|
- | Automotive,AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns,10ns | - | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A MOSFET 8 DFN DUAL INV/NON-INV
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Inverting,Non-Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8 DFN DUAL INVERTING
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 2A DUAL HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Non-Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns,10ns | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 8-MLPD
|
Tape & Reel (TR) | - | 6.5 V ~ 7.5 V | 0°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 5ns,5ns | - | ||||
Microchip Technology |
588
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH/LOW 8DFN
|
Tube | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-DFN-EP (3x3) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 36V | 10ns,10ns | - | ||||
Microchip Technology |
355
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A SYNC BUCK 8-DFN
|
Tube | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-DFN-EP (3x3) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 36V | 10ns,10ns | 0.5V,2V | ||||
Microchip Technology |
6,600
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HIGH/LOW 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-DFN-EP (3x3) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 36V | 10ns,10ns | - | ||||
Microchip Technology |
110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 2A 8DFN-S
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,15ns | 0.8V,2.4V | ||||
Microchip Technology |
105
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 2A 8DFN-S
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,15ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 2A SYNC BUCK 8-DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-DFN-EP (3x3) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 36V | 10ns,10ns | 0.5V,2V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER 2A 8DFN-S
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,15ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC MOSFET DRIVER 2A 8DFN-S
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting,Non-Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,15ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER 2A 8DFN-S
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting,Non-Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,15ns | 0.8V,2.4V |