- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 52
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
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IC MSFT DVR HALF-BRG 100V 8DFN
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8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-DFN (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 9ns，7.5ns | 1.4V，2.2V | 3A，4A | ||
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Microchip Technology |
377
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV 8DFN
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 38ns，33ns | 0.8V，2.4V | 10A，10A | |||
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Microchip Technology |
588
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH/LOW 8DFN
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4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-DFN-EP (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 36V | 10ns，10ns | - | 2A，2A | |||
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Microchip Technology |
260
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 9A INV 8DFN
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4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 38ns，33ns | 0.8V，2.4V | 10A，10A | |||
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Microchip Technology |
355
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A SYNC BUCK 8-DFN
|
4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-DFN-EP (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 10ns，10ns | 0.5V，2V | 2A，2A | |||
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Microchip Technology |
300
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DFN
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
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Microchip Technology |
300
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8DFN-S
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
300
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8DFN-S
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
240
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8DFN
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4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4A，4A | |||
|
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Microchip Technology |
240
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DFN
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
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Microchip Technology |
138
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 12A HS 8DFN
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 30ns，32ns | 0.8V，2.4V | 13A，13A | |||
|
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Microchip Technology |
211
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DFN
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
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Microchip Technology |
238
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A 8DFN
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 6A，6A | |||
|
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Microchip Technology |
256
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
|
Microchip Technology |
840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DFN
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4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
128
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | 4.5A，4.5A | |||
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Microchip Technology |
47
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8DFN-S
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，17ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
110
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 2A 8DFN-S
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 12ns，15ns | 0.8V，2.4V | 2A，2A | |||
|
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Microchip Technology |
105
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 2A 8DFN-S
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 12ns，15ns | 0.8V，2.4V | 2A，2A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 12A HS 8DFN
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 30ns，32ns | 0.8V，2.4V | 13A，13A |
