- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 182
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 420 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 420 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 360 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 360 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
3
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-DFN-S (6x5) | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-MLF
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-DFN (4x4) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A |