- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 1,495
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOW DUAL 2A HS 8SOIC
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Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
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- | - | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
|
MOSFET DRVR 1.5A SGL HS 8DFN
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x3) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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MOSFET DRVR 1.5A SGL HS 8DFN
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x3) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR DUAL PWR DIP
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Tube | - | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS 8SOIC
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Tape & Reel (TR) | Automotive，AEC-Q100 | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | |||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRVR COTS
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Tube | Military，MIL-STD-883 | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Tube | Military，MIL-STD-883 | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | |||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
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Tube | Military，MIL-STD-883 | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Tube | Military，MIL-STD-883 | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | |||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRVR COTS
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Tube | Military，MIL-STD-883 | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | |||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
|
IC DRIVER MOSFET COTS
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Tube | Military，MIL-STD-883 | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 95 MPQ: 1
|
IC DRIVER MOSFET 6A LS 8-SOIC
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Tube | - | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 12ns，13ns | 0.8V，2.4V | 6A，6A | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 47 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
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Tube | - | 0°C ~ 70°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 14-DIP
|
Tube | - | 0°C ~ 70°C (TA) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 25 MPQ: 1
|
IC DRIVER MOSFET QUAD 1.2A 14DIP
|
Tube | - | -40°C ~ 85°C (TA) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | 4.5A，4.5A | |||
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|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC POWER MANAGEMENT
|
Bulk | - | 0°C ~ 70°C | Die | Die | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Tube | Military，MIL-STD-883 | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A |
