- Series:
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- Operating Temperature:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 571
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 23ns,19ns | - | 10.6A,11.4A | ||||
ON Semiconductor |
12,541
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 23ns,19ns | - | 10.6A,11.4A | ||||
ON Semiconductor |
12,541
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
- | - | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 23ns,19ns | - | 10.6A,11.4A | ||||
ON Semiconductor |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | - | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 140°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 140°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
- | - | -40°C ~ 140°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | Automotive,AEC-Q100 | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
Maxim Integrated |
4,635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | - | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
3,509
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | - | 0°C ~ 70°C (TA) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
1,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET DUAL NON-INV 8SOIC
|
Tube | - | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
2,589
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
2,589
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
- | - | -55°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
Texas Instruments |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 140°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
7,114
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 140°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 7ns,6ns | 1V,2.3V | 5A,5A |