- Packaging:
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- Operating Temperature:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 161
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Maxim Integrated |
952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-DIP
|
Tube | -40°C ~ 85°C (TA) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
2,876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8DIP
|
Tube | -40°C ~ 140°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Maxim Integrated |
259
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
Tube | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | 0°C ~ 70°C (TA) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
2,350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-DIP
|
Tube | -40°C ~ 85°C (TA) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
1,523
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
103
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
Tube | -40°C ~ 85°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-DIP
|
Tube | 0°C ~ 70°C (TA) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
322
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-DIP
|
Tube | -40°C ~ 85°C (TA) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
55
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | 0°C ~ 70°C (TA) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
92
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
76
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 0°C ~ 70°C (TA) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
31
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL 8-DIP
|
Tube | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | -40°C ~ 85°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
25
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
|
Bulk | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-DIP
|
Tube | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | -40°C ~ 85°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | 0°C ~ 70°C (TA) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | 0°C ~ 70°C (TA) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 6A,6A |