- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 1,495
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
7,114
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8SOIC
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- | - | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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Analog Devices Inc. |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
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Analog Devices Inc. |
4,462
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
|
Analog Devices Inc. |
4,462
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
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- | - | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
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Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC PWR DRIVER 6SON
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，3.5ns | 1.08V，1.93V | 4A，6A | ||
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Texas Instruments |
3,443
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR DRIVER 6SON
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，3.5ns | 1.08V，1.93V | 4A，6A | ||
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Texas Instruments |
3,443
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR DRIVER 6SON
|
- | - | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，3.5ns | 1.08V，1.93V | 4A，6A | ||
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Texas Instruments |
2,876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8DIP
|
Tube | - | -40°C ~ 140°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tape & Reel (TR) | - | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
6,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Cut Tape (CT) | - | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
6,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | - | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
Tube | - | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | - | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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Maxim Integrated |
506
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
Tube | - | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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Maxim Integrated |
259
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
Tube | - | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | - | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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|
|
Maxim Integrated |
2,350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-DIP
|
Tube | - | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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|
|
Maxim Integrated |
1,523
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | - | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CMOS QUAD 40MHZ 16-SOIC
|
Tube | - | -40°C ~ 85°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 0.8V，2V | 2A，2A | ||
|
|
|
Maxim Integrated |
263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A HS 8-SOIC
|
Tube | - | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A |
