- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 1,495
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 100 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | - | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET SNGL 6A HS 8DIP
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Tube | - | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET SNGL 6A HS 8DIP
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Tube | - | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR MOSFET DUAL NON-INV 8SOIC
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Tube | - | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC MOSFET DVR 1.5A DUAL OD 8CDIP
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Tube | - | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 40ns，40ns (Max) | 0.8V，2.4V | 1.5A，1.5A | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC MOSFET DVR 1.5A DUAL OD 8CDIP
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Tube | - | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 40ns，40ns (Max) | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET 6A HS 8-SOIC
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Tube | - | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET 6A HS 8-DIP
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Tube | - | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET 6A HS 8-SOIC
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Tube | - | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRIVER DUAL MOSFET 1.5A 8-DIP
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Tube | - | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRIVER DUAL MOSFET 1.5A 8SOIC
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Tube | - | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRIVER DUAL MOSFET 1.5A 8-DIP
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Tube | - | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRIVER DUAL MOSFET 1.5A 8SOIC
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Tube | - | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-DIP
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Tube | - | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-SOIC
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Tube | - | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-DIP
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Tube | - | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-SOIC
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Tube | - | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 720 MPQ: 1
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IC DVR CMOS QUAD 40MHZ 16-QFN
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Tube | - | -40°C ~ 85°C (TA) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 0.8V，2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 658 MPQ: 1
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IC DVR CMOS QUAD 40MHZ 16-SOIC
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Tube | - | -40°C ~ 85°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 0.8V，2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 582 MPQ: 1
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IC DVR CMOS QUAD 40MHZ 16-QSOP
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Tube | - | -40°C ~ 85°C (TA) | 16-SSOP (0.154"，3.90mm Width) | 16-QSOP | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 0.8V，2V | 2A，2A |
