- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 1,495
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | - | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | - | 5A，5A | ||
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Maxim Integrated |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | - | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR SGL CMOS 2A 6MLP
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | - | 3A，3A | ||
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|
|
ON Semiconductor |
840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL CMOS 2A 6MLP
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | - | 3A，3A | ||
|
|
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ON Semiconductor |
840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL CMOS 2A 6MLP
|
- | - | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | - | 3A，3A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
979
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | - | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
979
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | - | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8MSOP
|
Tape & Reel (TR) | - | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8MSOP
|
Cut Tape (CT) | - | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
|
Texas Instruments |
460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8MSOP
|
- | - | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | - | 5A，5A | ||
|
|
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Texas Instruments |
365
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE DUAL 8SOIC
|
Tube | - | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | - | 5A，5A | ||
|
|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Tape & Reel (TR) | Automotive，AEC-Q100 | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
118
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
118
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
- | Automotive，AEC-Q100 | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSON
|
Tape & Reel (TR) | - | -55°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A |
