- Series：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 283
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC MOSFET DRVR SYNCH RECT 8QFN
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Tube | - | 0°C ~ 125°C (TJ) | 8-VQFN Exposed Pad | 8-QFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 8ns，8ns | 1V，2V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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- | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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- | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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ON Semiconductor |
12,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER QFN
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 36-TFQFN Exposed Pad | 36-QFN (6x4) | Surface Mount | Non-Inverting | Synchronous | High-Side or Low-Side | 1 | N-Channel MOSFET | 35V | - | - | - | |||
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ON Semiconductor |
14,237
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER QFN
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Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 36-TFQFN Exposed Pad | 36-QFN (6x4) | Surface Mount | Non-Inverting | Synchronous | High-Side or Low-Side | 1 | N-Channel MOSFET | 35V | - | - | - | |||
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ON Semiconductor |
14,237
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER QFN
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- | - | -40°C ~ 150°C (TJ) | 36-TFQFN Exposed Pad | 36-QFN (6x4) | Surface Mount | Non-Inverting | Synchronous | High-Side or Low-Side | 1 | N-Channel MOSFET | 35V | - | - | - | |||
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ON Semiconductor |
12,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 40V | 16ns，11ns | 0.6V，3.3V | - | |||
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ON Semiconductor |
12,682
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
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Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 40V | 16ns，11ns | 0.6V，3.3V | - | |||
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ON Semiconductor |
12,682
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER VR12.5 8DFN
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- | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 40V | 16ns，11ns | 0.6V，3.3V | - | |||
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Microchip Technology |
4,377
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH/LOW 8SOIC
|
Tube | - | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 36V | 10ns，10ns | - | 2A，2A | |||
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ON Semiconductor |
3,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | 0.7V，3.4V | - | |||
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ON Semiconductor |
5,501
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
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Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | 0.7V，3.4V | - | |||
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ON Semiconductor |
5,501
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
- | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | 0.7V，3.4V | - | |||
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Microchip Technology |
588
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH/LOW 8DFN
|
Tube | - | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 36V | 10ns，10ns | - | 2A，2A | |||
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Microchip Technology |
355
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A SYNC BUCK 8-DFN
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Tube | - | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 10ns，10ns | 0.5V，2V | 2A，2A | |||
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Microchip Technology |
6,600
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HIGH/LOW 8DFN
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 36V | 10ns，10ns | - | 2A，2A |
