- Series：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 26
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | - | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
6,116
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
- | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 34V | 30ns，8ns | 0.6V，2.65V | - | ||
|
|
|
Texas Instruments |
3,689
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 4A 10SON
|
- | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 107V | 7ns，1.5ns | 1.76V，1.89V | 1.2A，5A | ||
|
|
|
Texas Instruments |
45,363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRDG 5A 12SMD
|
- | -40°C ~ 125°C (TJ) | 12-WFBGA，DSBGA | 12-DSBGA | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 107V | 7ns，1.5ns | 1.76V，1.89V | 1.2A，5A | ||
|
|
|
Texas Instruments |
3,775
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
- | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 34V | 30ns，8ns | 0.6V，2.65V | - | ||
|
|
|
Texas Instruments |
889
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 10SON
|
- | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 107V | 7ns，1.5ns | 1.76V，1.89V | 1.2A，5A | ||
|
|
|
Texas Instruments |
8,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
- | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 15ns，10ns | 0.7V，4V | - | ||
|
|
|
Texas Instruments |
695
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LMG1205YFXT
|
- | -40°C ~ 125°C (TJ) | 12-WFBGA，DSBGA | 12-DSBGA | Surface Mount | TTL | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 7ns，3.5ns | - | 1.2A，5A | ||
|
|
|
STMicroelectronics |
11,534
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SMART DRIVER SYNC 8-SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 40ns，30ns | - | 2A，3.5A | ||
|
|
|
STMicroelectronics |
4,095
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC RECT SMART DRIVER 8 SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 40ns，30ns | - | 2A，3.5A | ||
|
|
|
Texas Instruments |
5,944
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 12DSBGA
|
- | -40°C ~ 125°C (TJ) | 12-WFBGA，DSBGA | 12-DSBGA | Surface Mount | TTL | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 7ns，3.5ns | - | 1.2A，5A | ||
|
|
|
Texas Instruments |
4,330
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 5A 10SON
|
- | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 107V | 7ns，1.5ns | 1.76V，1.89V | 1.2A，5A | ||
|
|
|
Texas Instruments |
3,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 30ns，8ns | 0.6V，2.65V | - | ||
|
|
|
Infineon Technologies |
1,229
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR N-CH DUAL 16QFN
|
- | 0°C ~ 85°C (TA) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | - | 15ns，12ns | - | - | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
- | -10°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 8ns，8ns | 0.5V，2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC RECT 8-QFN
|
- | -40°C ~ 125°C (TJ) | 8-VQFN Exposed Pad | 8-QFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 8ns，8ns | 1V，2V | -，4A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC PRE-FET DVR 6CH S/P 28SSOP
|
- | -40°C ~ 150°C (TJ) | 28-SSOP (0.209"，5.30mm Width) | 28-SSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 6 | N-Channel MOSFET | - | 3.5μs，3μs | - | 1.2mA，1.2mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
- | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 16ns，11ns | 0.6V，3.3V | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A |
