Number of Drivers:
Découvrez les produits 133
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
SN75477DR
Texas Instruments
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
- 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Low-Side 2 - - 50ns,90ns 0.8V,2V 500mA,500mA
TPS51604DSGR
Texas Instruments
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC MOSFET DRVR SYNC 8WSON
- -40°C ~ 105°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 34V 30ns,8ns 0.6V,2.65V -
LM5113SD/NOPB
Texas Instruments
3,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRIDGE 4A 10SON
- -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
LM5113TME/NOPB
Texas Instruments
44,750
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DRVR HALF BRDG 5A 12SMD
- -40°C ~ 125°C (TJ) 12-WFBGA,DSBGA 12-DSBGA Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
TPS51604DSGT
Texas Instruments
1,500
3 jours
-
MOQ: 250  MPQ: 1
IC MOSFET DRVR SYNC 8WSON
- -40°C ~ 105°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 34V 30ns,8ns 0.6V,2.65V -
LM5113SDE/NOPB
Texas Instruments
750
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DRIVER HALF BRIDGE 10SON
- -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
TPS51601ADRBR
Texas Instruments
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC MOSFET DRVR SYNC DUAL 8SON
- -40°C ~ 105°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET - 15ns,10ns 0.7V,4V -
ISL6208BIRZ-T
Renesas Electronics America Inc.
6,000
3 jours
-
MOQ: 6000  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8DFN
- -40°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-DFN-EP (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V 8ns,8ns 0.5V,2V 2A,2A
LMG1205YFXT
Texas Instruments
250
3 jours
-
MOQ: 250  MPQ: 1
LMG1205YFXT
- -40°C ~ 125°C (TJ) 12-WFBGA,DSBGA 12-DSBGA TTL Independent Half-Bridge 2 N-Channel MOSFET 100V 7ns,3.5ns - 1.2A,5A
ISL6208BCRZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8DFN
- -10°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-DFN-EP (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V 8ns,8ns 0.5V,2V 2A,2A
STSR2PMCD-TR
STMicroelectronics
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC SMART DRIVER SYNC 8-SOIC
- -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - 40ns,30ns - 2A,3.5A
STSR2PCD-TR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC SYNC RECT SMART DRIVER 8 SOIC
- -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - 40ns,30ns - 2A,3.5A
LMG1205YFXR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR HALF-BRIDGE 12DSBGA
- -40°C ~ 125°C (TJ) 12-WFBGA,DSBGA 12-DSBGA TTL Independent Half-Bridge 2 N-Channel MOSFET 100V 7ns,3.5ns - 1.2A,5A
LM5113SDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC GATE DVR HALF BRIDGE 5A 10SON
- -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
LM5113QDPRRQ1
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC HALF-BRIDGE GATE DRVR 10WSON
Automotive,AEC-Q100 -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 7ns,3.5ns - 1.2A,5A
TPS51604QDSGRQ1
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DRIVER SYNC 8WSON
Automotive,AEC-Q100 -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 30ns,8ns 0.6V,2.65V -
IR3598MTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DRVR N-CH DUAL 16QFN
- 0°C ~ 85°C (TA) 16-VFQFN Exposed Pad 16-QFN (3x3) Non-Inverting Synchronous Half-Bridge 4 N-Channel MOSFET - 15ns,12ns - -
SN75477DRE4
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
- 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Low-Side 2 - - 50ns,90ns 0.8V,2V 500mA,500mA
ISL6609CBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8-SOIC
- 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 8ns,8ns 1V,2V -,4A
ISL6208CHRZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8DFN
- -10°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-DFN-EP (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V 8ns,8ns 0.5V,2V 2A,2A