- Packaging：
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- Series：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 20
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
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Tape & Reel (TR) | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 30ns，8ns | 0.6V，2.65V | - | ||
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Texas Instruments |
3,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 30ns，8ns | 0.6V，2.65V | - | ||
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|
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Texas Instruments |
3,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
- | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 30ns，8ns | 0.6V，2.65V | - | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 250 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Tape & Reel (TR) | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 30ns，8ns | 0.6V，2.65V | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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- | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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- | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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ON Semiconductor |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER QFN
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 36-TFQFN Exposed Pad | 36-QFN (6x4) | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - | |||
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ON Semiconductor |
14,237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER QFN
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 36-TFQFN Exposed Pad | 36-QFN (6x4) | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - | |||
|
|
ON Semiconductor |
14,237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER QFN
|
- | - | -40°C ~ 150°C (TJ) | 36-TFQFN Exposed Pad | 36-QFN (6x4) | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - | |||
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ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | |||
|
|
ON Semiconductor |
5,501
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | |||
|
|
ON Semiconductor |
5,501
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
- | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | |||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC REG VR CTLR 5V 8DFN
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.6V，3.3V | - | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DVR DUAL 5V 16QFN
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (2.5x3.5) | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | |||
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|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER QFN
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 36-TFQFN Exposed Pad | 36-QFN (6x4) | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - | |||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 5V 10DFN
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Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A |
