- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 230
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE DVR HI/LO SIDE 8MSOP
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Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 990ns，715ns | 2.3V，- | ||
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Texas Instruments |
1,007
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR HI/LO SIDE 8MSOP
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Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 990ns，715ns | 2.3V，- | ||
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Texas Instruments |
1,007
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO SIDE 8MSOP
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- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 990ns，715ns | 2.3V，- | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HI/LO SIDE 10WSON
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Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 990ns，715ns | 2.3V，- | ||
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Renesas Electronics America Inc. |
838
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC FET DRIVER H-BRIDGE 1A 16SOIC
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Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 70V | 9ns，9ns | 1V，2.5V | ||
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Renesas Electronics America Inc. |
984
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC FET DRIVER H-BRIDGE 1A 16-DIP
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Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 70V | 9ns，9ns | 1V，2.5V | ||
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Texas Instruments |
1,081
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR HI/LO SIDE 1A 8SOIC
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Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 990ns，715ns | 2.3V，- | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HI/LO SIDE 8-SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns，15ns | 0.7V，2.5V | ||
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Infineon Technologies |
2,550
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 8-SOIC
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Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns，15ns | 0.7V，2.5V | ||
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Infineon Technologies |
2,550
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8-SOIC
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- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns，15ns | 0.7V，2.5V | ||
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Infineon Technologies |
41
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns，15ns | 0.8V，2.7V | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRVR HALF BRDG 100V 1A 10WSON
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Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 990ns，715ns | 2.3V，- | ||
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Texas Instruments |
1,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRVR HALF BRDG 100V 1A 10WSON
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Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 990ns，715ns | 2.3V，- | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRVR HALF BRDG 100V 1A 10WSON
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- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 990ns，715ns | 2.3V，- | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 250 MPQ: 1
|
IC DRVR HALF BRIDGE 60V 8-DFN
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Tape & Reel (TR) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 8ns，2ns | 1.63V，2.06V | ||
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Renesas Electronics America Inc. |
181
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 60V 8-DFN
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Cut Tape (CT) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 8ns，2ns | 1.63V，2.06V | ||
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Renesas Electronics America Inc. |
181
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 60V 8-DFN
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- | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 8ns，2ns | 1.63V，2.06V | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC DVR HALF-BRDG 100V 1A 8-EMSOP
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Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 990ns，715ns | 2.3V，- | ||
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|
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Texas Instruments |
457
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG 100V 1A 8-EMSOP
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Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 990ns，715ns | 2.3V，- | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG 100V 1A 8-EMSOP
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- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 990ns，715ns | 2.3V，- |
