- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 11
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Infineon Technologies |
2,599
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | ||
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Renesas Electronics America Inc. |
984
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC FET DRIVER H-BRIDGE 1A 16-DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 70V | 9ns，9ns | 1V，2.5V | ||
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Infineon Technologies |
41
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 8DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns，15ns | 0.8V，2.7V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
|
HI/LO SIDE DRVR 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | ||
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Vishay Siliconix |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSFET DVR ADAPTIVE PWR 8DIP
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10.8 V ~ 16.5 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 500V | 50ns，35ns | - | ||
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Microchip Technology |
597
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1A HI-SPEED 8DIP
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4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | |||
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Microchip Technology |
152
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1A HS 8DIP
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4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 660 MPQ: 1
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IC MOSFET DVR 1A HS INV 8DIP
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4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC MOSFET DVR 1A HS INV 8DIP
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4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 1A HS N-INV 8DIP
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4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8DIP
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4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V |
