Découvrez les produits 25
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
IR2011STRPBF
Infineon Technologies
12,500
3 jours
-
MOQ: 2500  MPQ: 1
HI/LO SIDE DRVR 8SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IR2011STRPBF
Infineon Technologies
14,762
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Cut Tape (CT) 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IR2011SPBF
Infineon Technologies
5,206
3 jours
-
MOQ: 1  MPQ: 1
HI/LO SIDE DRVR 8SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IRS2011SPBF
Infineon Technologies
3,476
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LOW SIDE 8-SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 200V 25ns,15ns 0.8V,2.7V
IR2011PBF
Infineon Technologies
2,599
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Independent Half-Bridge 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IRS2011STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE 8-SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 200V 25ns,15ns 0.7V,2.5V
IRS2011STRPBF
Infineon Technologies
2,550
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 8-SOIC
Cut Tape (CT) 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 200V 25ns,15ns 0.7V,2.5V
IRS2011STRPBF
Infineon Technologies
2,550
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 8-SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 200V 25ns,15ns 0.7V,2.5V
IRS2011PBF
Infineon Technologies
41
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 8DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Independent Half-Bridge 2 N-Channel MOSFET 200V 25ns,15ns 0.8V,2.7V
IR2011
Infineon Technologies
Enquête
-
-
MOQ: 250  MPQ: 1
HI/LO SIDE DRVR 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Independent Half-Bridge 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IR2011S
Infineon Technologies
Enquête
-
-
MOQ: 285  MPQ: 1
HI/LO SIDE DRVR 8SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IR2011STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
HI/LO SIDE DRVR 8SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
TC1411EOA
Microchip Technology
568
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1A HS INV 8SOIC
Tube 4.5 V ~ 16 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2V
TC1411COA
Microchip Technology
Enquête
-
-
MOQ: 700  MPQ: 1
IC MOSFET DVR 1A HS INV 8SOIC
Tube 4.5 V ~ 16 V 0°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2V
TC1411COA713
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
IC MOSFET DVR 1A HS INV 8SOIC
Tape & Reel (TR) 4.5 V ~ 16 V 0°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2V
TC1411VOA
Microchip Technology
Enquête
-
-
MOQ: 700  MPQ: 1
IC MOSFET DVR 1A HS INV 8SOIC
Tube 4.5 V ~ 16 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2V
TC1411VOA713
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
IC MOSFET DVR 1A HS INV 8SOIC
Tape & Reel (TR) 4.5 V ~ 16 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2V
TC1411CPA
Microchip Technology
Enquête
-
-
MOQ: 660  MPQ: 1
IC MOSFET DVR 1A HS INV 8DIP
Tube 4.5 V ~ 16 V 0°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2V
TC1411EOA713
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
IC MOSFET DVR 1A HS INV 8SOIC
Tape & Reel (TR) 4.5 V ~ 16 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2V
TC1411EPA
Microchip Technology
Enquête
-
-
MOQ: 600  MPQ: 1
IC MOSFET DVR 1A HS INV 8DIP
Tube 4.5 V ~ 16 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2V