- Packaging：
-
- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Conditions sélectionnées:
Découvrez les produits 37
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
|
|
|
NXP USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
Tape & Reel (TR) | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | ||
|
|
|
NXP USA Inc. |
11,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
Cut Tape (CT) | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | ||
|
|
|
NXP USA Inc. |
11,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
- | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20-SOIC
|
Tape & Reel (TR) | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20-SOIC
|
Cut Tape (CT) | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 48HTQFP
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.4 V ~ 45 V | -40°C ~ 150°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 48HTQFP
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.4 V ~ 45 V | -40°C ~ 175°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 48HTQFP
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.4 V ~ 45 V | -40°C ~ 150°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | - | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 38 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20-SOIC
|
Tube | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC PRE-DRIVER FULL BRIDGE 20SOIC
|
Tape & Reel (TR) | - | 5.5 V ~ 55 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | - | - | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 38 MPQ: 1
|
IC PRE-DRIVER FULL BRIDGE 20SOIC
|
Tube | - | 5.5 V ~ 55 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | - | - | ||
|
|
Microchip Technology |
19,800
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1A HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | |||
|
|
Microchip Technology |
292
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | |||
|
|
Microchip Technology |
597
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HI-SPEED 8DIP
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | |||
|
|
Microchip Technology |
679
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | |||
|
|
Microchip Technology |
152
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS 8DIP
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | |||
|
|
Microchip Technology |
568
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 700 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 700 MPQ: 1
|
IC MOSFET DVR 1A HS N-INV 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns |
